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María E Dávila

María E Dávila

Instituto de Ciencia de Materiales de Madrid - ICMM - CSIC, Spain

Title: Novel silicon nano-objects

Biography

Biography: María E Dávila

Abstract

The discovery of the formation of (OD) silicon nano-dot and (1D) silicon nano-ribbons (SiNRs) on Ag(110) was first reported in 2005. Silicon nano-dot are the smallest form of silicon nano-structures that exploit properties of quantum dots to localize magnetic or electrical fields at very small scales and the nano-ribbons are unique form of silicon grown by direct synthesis (in our case are silicon’s stripes grown along the substrate’s surface Ag(110) with ultra-thin width (<50 nm) following the bottom-up approach that could be assembled into functional devices. The first step in this aproach is the synthesis and characterization of this form of nano-silicon and the study of their chemical, physical and structural properties. To explore the potential of one-dimensional (1D) silicon nanoribbons SiNRs, it is important to control and vary their structure in terms of length, orientation and diameter, that could modify their electronic properties. In this talk, we will first focus on the synthesis and structural characterization of the Si nano-dot and SiNRs, and then on their fundamental properties and also their functionalization and reactivity. Finally, we will describe possible applications of the SiNRs on nanoelectronic devices.